2013/01-至今, 清华大学机械工程系，副研究员
2005/12-2012/12,清华大学精密仪器与机械学系，副研究员
1998/04-2005/12,清华大学精密仪器与机械学系，讲师
1992/08-1995/02,山东工业大学化学工程系，助教
1.Xiaolei Shi, Li Xu, Yan Zhou, Chunli Zou, Rongrong Wang andGuoshun Pan.An in situ study of chemical-mechanical polishingbehaviours on sapphire (0001) via simulating thechemical product-removal process by AFMtappingmode in both liquid and air environments. Nanoscale,2018,10:19692-19700.
2.Xu, Li; Zhang, Xin; Kang, Chengxi; Wang, Rongrong; Zou, Chunli; Zhou, Yan; Pan, Guoshun. Preparation of a novel catalyst (SoFe(III)) and its catalytic performance towards the removal rate of sapphire substrate during CMP process. Tribology Internation,2018,120:99-104.
3.Zhou, Yan; Luo, Haimei; Pan, Guoshun; Zou, Chunli; Luo, Guihai; Chen, Gaopan; Kang, Chengxi. Study on Pad Performance Deterioration in Chemical Mechanical Polishing (CMP) of Fused Silica.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,2018,7(6):P295-P298.
4.Li Xu,Gaopan Chen, Haimei Luo, Xiaolei Shi, Guihai Luo,Guoshun Pan.Investigation of the Chemical Residuals on the Fused Silicaduring Chemical Mechanical Polishing.ChemistrySelect,2018,3:8930-835.
5.Cao, Xu; Pan, Guoshun; Huang, Peng; Guo, Dan; Xie, Guoxin，Silica-Coated Core-Shell Structured Polystyrene Nanospheres and Their Size-Dependent Mechanical Properties. Langmuir,2017,33(33):8225-8232.
6.Shi, Xiaolei; Zou, Chunli; Pan, Guoshun; Gong, Hua; Xu, Li; Zhou, Yan.Atomically smooth gallium nitride surface prepared by chemical-mechanical polishing with S2O82--Fe2+ based slurry.Tribology Internation,2017,110:441-450.
7.Zhou, Yan; Pan, Guoshun; Gong, Hua; Shi, Xiaolei; Zou, Chunli，Characterization of sapphire chemical mechanical polishing performances using silica with different sizes and their removal mechanisms.COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS,2017,513:153-159.
8.Yan Zhou, Guoshun Pan,Chunli Zou, Lei Wang,Chemical Mechanical Polishing (CMP) of SiC Wafer Using Photo-Catalyst Incorporated Pad.ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY,2017,6(9):603-608.
